SEQUENCE

Sense and Readout Electronics Cryogenically Integrated for
QUantun ENhanced Computation and Evolving Communication

Publications

E. Caruso, J. Lin, S. Monaghan, K. Cherkaoui, F. Gity, P. Palestri, D. Esseni, L. Selmi, and P. K. Hurley. The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in MOS Systems, IEEE Transactions on Electron Devices, 67, 4372-4378 (2020).

M. Cassé, B. C. Paz, G. Ghibaudo, T. Poiroux, E. Vincent, P. Galy, A. Juge, F. Gaillard, S. d. Franceschi, T. Meunier, and M. Vinet. Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K, Applied Physics Letters 116, 243502 (2020).
 
A. Krishnaraja, J. Svensson, E. Memisevic, Z. Zhu, A. R. Persson, E. Lind, L. R. Wallenberg, and L.-E. Wernersson. Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs, ACS Applied Electronic Materials, 2, 2882-2887 (2020).
 
C. Marty, C. Convertino, and C. Zota. Simulation of low-noise amplifier with quantized ballistic nanowire channel, Semiconductor Science and Technology, 35, 115027 (2020).
 
L. Södergren, N. S. Garigapati, M. Borg, and E. Lind. Mobility of near surface MOVPE grown InGaAs/InP quantum wells, 117, 013102 (2020).
 
F. Thome, F. Heinz, and A. Leuther. InGaAs MOSHEMT W-Band LNAs on Silicon and Gallium Arsenide Substrates, IEEE Microwave and Wireless Components Letters, 30, 1089-1092 (2020).