SEQUENCE

Sense and Readout Electronics Cryogenically Integrated for
QUantun ENhanced Computation and Evolving Communication

Publications

 
1.    E. Caruso, J. Lin, S. Monaghan, K. Cherkaoui, F. Gity, P. Palestri, D. Esseni, L. Selmi, and P. K. Hurley. The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in MOS Systems, IEEE Transactions on Electron Devices, 67, 4372-4378 (2020).
 
2.    M. Cassé, B. C. Paz, G. Ghibaudo, T. Poiroux, S. Barraud, M. Vinet, S. d. Franceschi, T. Meunier, and F. Gaillard. Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance, IEEE Transactions on Electron Devices, 67, 4636-4640 (2020).
 
3.    M. Cassé, B. C. Paz, G. Ghibaudo, T. Poiroux, E. Vincent, P. Galy, A. Juge, F. Gaillard, S. d. Franceschi, T. Meunier, and M. Vinet. Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2 K, 116, 243502 (2020).
 
4.    G. Ghibaudo, M. Aouad, M. Casse, T. Poiroux, and C. Theodorou. On the diffusion current in a MOSFET operated down to deep cryogenic temperatures, Solid-State Electronics, 176, 107949 (2021).
 
5.    A. Krishnaraja, J. Svensson, E. Memisevic, Z. Zhu, A. R. Persson, E. Lind, L. R. Wallenberg, and L.-E. Wernersson. Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs, ACS Applied Electronic Materials, 2, 2882-2887 (2020).
 
6.    C. Marty, C. Convertino, and C. Zota. Simulation of low-noise amplifier with quantized ballistic nanowire channel, Semiconductor Science and Technology, 35, 115027 (2020).
 
7.    P. Olausson, L. Södergren, M. Borg, and E. Lind. Optimization of Near-Surface Quantum Well Processing, n/a, 2000720.
 
8.    L. Södergren, N. S. Garigapati, M. Borg, and E. Lind. Mobility of near surface MOVPE grown InGaAs/InP quantum wells, 117, 013102 (2020).
 
9.    F. Thome, F. Heinz, and A. Leuther. InGaAs MOSHEMT W-Band LNAs on Silicon and Gallium Arsenide Substrates, IEEE Microwave and Wireless Components Letters, 30, 1089-1092 (2020).
 
10.    F. Thome, and A. Leuther. First Demonstration of Distributed Amplifier MMICs With More Than 300-GHz Bandwidth, IEEE Journal of Solid-State Circuits, 1-1 (2021).