Publications
E. Caruso, J. Lin, S. Monaghan, K. Cherkaoui, F. Gity, P. Palestri, D. Esseni, L. Selmi, and P. K. Hurley. The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in MOS Systems, IEEE Transactions on Electron Devices, 67, 4372-4378 (2020).
A. Krishnaraja, J. Svensson, E. Memisevic, Z. Zhu, A. R. Persson, E. Lind, L. R. Wallenberg, and L.-E. Wernersson. Tuning of Source Material for InAs/InGaAsSb/GaSb Application-Specific Vertical Nanowire Tunnel FETs, ACS Applied Electronic Materials, 2, 2882-2887 (2020).
C. Marty, C. Convertino, and C. Zota. Simulation of low-noise amplifier with quantized ballistic nanowire channel, Semiconductor Science and Technology, 35, 115027 (2020).
F. Thome, F. Heinz, and A. Leuther. InGaAs MOSHEMT W-Band LNAs on Silicon and Gallium Arsenide Substrates, IEEE Microwave and Wireless Components Letters, 30, 1089-1092 (2020).