A list of publications on web of science can be found here

 

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1.    S. Andric, L. O. Fhager, and L. E. Wernersson. Millimeter-Wave Vertical III-V Nanowire MOSFET Device-to-Circuit Co-Design, IEEE Trans. Nanotechnol., 20, 434-440 (2021).

2.    S. Andric, L. Ohlsson-Fhager, L. E. Wernersson, and Ieee, Design of III-V Vertical Nanowire MOSFETs for Near-Unilateral Millimeter-Wave Operation. Ieee: New York, 2021; p 85-88.

 

3.    A. Beckers, D. Beckers, F. Jazaeri, B. Parvais, and C. Enz. Generalized Boltzmann relations in semiconductors including band tails, J. Appl. Phys., 129, 10 (2021).

 

4.    D. Caimi, M. Sousa, S. Karg, and C. B. Zota. Scaled III-V-on-Si transistors for low-power logic and memory applications, Jpn. J. Appl. Phys., 60, 7 (2021).

 

5.    D. Caimi, P. Tiwari, M. Sousa, K. E. Moselund, and C. B. Zota. Heterogeneous Integration of III-V Materials by Direct Wafer Bonding for High-Performance Electronics and Optoelectronics, IEEE Trans. Electron Devices, 68, 3149-3156 (2021).

 

6.    E. Caruso, J. Lin, S. Monaghan, K. Cherkaoui, F. Gity, P. Palestri, D. Esseni, L. Selmi, and P. K. Hurley. The Role of Oxide Traps Aligned With the Semiconductor Energy Gap in MOS Systems, IEEE Trans. Electron Devices, 67, 4372-4378 (2020).

7.    M. Casse, B. C. Paz, G. Ghibaudo, T. Poiroux, S. Barraud, M. Vinet, S. de Franceschi, T. Meunier, and F. Gaillard. Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance, IEEE Trans. Electron Devices, 67, 4636-4640 (2020).

8.    M. Casse, B. C. Paz, G. Ghibaudo, T. Poiroux, E. Vincent, P. Galy, A. Juge, F. Gaillard, S. de Franceschi, T. Meunier, and M. Vinet. Evidence of 2D intersubband scattering in thin film fully depleted silicon-on-insulator transistors operating at 4.2K, Appl. Phys. Lett., 116, 5 (2020).

9.    E. Catapano, G. Ghibaudo, M. Casse, T. M. Frutuoso, B. C. Paz, T. Bedecarrats, A. Apra, F. Gaillard, S. De Franceschi, T. Meunier, and M. Vinet. Statistical and Electrical Modeling of FDSOI Four-Gate Qubit MOS Devices at Room Temperature, IEEE J. Electron Devices Soc., 9, 582-590 (2021).

10.    C. Convertino, C. B. Zota, H. Schmid, D. Caimi, L. Czornomaz, A. M. Ionescu, and K. E. Moselund. A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon, Nat. Electron., 4, 162-170 (2021).

11.    G. Ghibaudo, M. Aouad, M. Casse, S. Martinie, T. Poiroux, and F. Balestra. On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature, Solid-State Electron., 170, 4 (2020).

12.    G. Ghibaudo, M. Aouad, M. Casse, T. Poiroux, and C. Theodorou. On the diffusion current in a MOSFET operated down to deep cryogenic temperatures, Solid-State Electron., 176, 6 (2021).

13.    F. Heinz, F. Thome, A. Leuther, and O. Ambacher. A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation, IEEE Trans. Microw. Theory Tech., 69, 3896-3907 (2021).

14.    A. Krishnaraja, J. Svensson, E. Memisevic, Z. Y. S. Zhu, A. R. Persson, E. Lind, L. R. Wallenberg, and L. E. Wernersson. Tuning of Source Material for InAs/InGaAsSb/GaSb ApplicationSpecific Vertical Nanowire Tunnel FETs, ACS Appl. Electron. Mater., 2, 2882-2887 (2020).

15.    A. Krishnaraja, J. Svensson, L. E. Wernersson, and Ieee, Vertical InAs/InGaAsSb/GaSb Nanowire Tunnel FETs on Si with Drain Field-Plate and EOT=1 nm Achieving S-min=32 mV/dec and g(m)/I-D=100 V-1. In 2020 Ieee Silicon Nanoelectronics Workshop,  Ieee: New York, 2020, 17-18.

16.    C. Marty, C. Convertino, and C. Zota. Simulation of low-noise amplifier with quantized ballistic nanowire channel, Semicond. Sci. Technol., 35, 5 (2020).

17.    P. Olausson, L. Sodergren, M. Borg, and E. Lind. Optimization of Near-Surface Quantum Well Processing, Phys. Status Solidi A-Appl. Mat., 218, 7 (2021).

18.    B. C. Paz, M. Casse, C. Theodorou, G. Ghibaudo, T. Kammler, L. Pirro, M. Vinet, S. de Franceschi, T. Meunier, and F. Gaillard. Performance and Low-Frequency Noise of 22-nm FDSOI Down to 4.2 K for Cryogenic Applications, IEEE Trans. Electron Devices, 67, 4563-4567 (2020).

19.    L. Soedergren, N. S. Garigapati, M. Borg, and E. Lind. Mobility of near surface MOVPE grown InGaAs/InP quantum wells, Appl. Phys. Lett., 117, 5 (2020).

20.    F. Thome, F. Heinz, and A. Leuther. InGaAs MOSHEMT W-Band LNAs on Silicon and Gallium Arsenide Substrates, IEEE Microw. Wirel. Compon. Lett., 30, 1089-1092 (2020).

21.    L. E. Wernersson, III-V Nanowire MOSFETs: RF-Properties and Applications. Ieee: New York, 2020.